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| Zeit | Aktuelle Nachrichten | ||
|---|---|---|---|
| 10:42 | Qorvo adds RF multi-chip modules for advanced radar applications | ||
| 09:42 | Tagore launches high-power GaN SPDTs for broadband switching | ||
| Di | MACOM showcasing RF & microwave capabilities and foundry services at IMS2024 | ||
| Di | SiCSem to collaborate with Indian Institute of Technology to develop compound semiconductor ecosystem in Bhubaneswar | ||
| Di | Qorvo adds three compact MMIC power amplifiers for Ku-band SATCOM terminals | ||
| Mo | WIN releases moisture rugged 0.1µm GaAs pHEMT technology | ||
| Mo | ROHM adds 2-in-1 silicon carbide molded modules to TRCDRIVE pack series | ||
| Mo | Fraunhofer IAF presents 1200V GaN HEMTs at PCIM Europe | ||
| Mo | NYSE American to begin delisting NUBURU | ||
| Fr | WIN announces beta release of NP12-0B mmWave RF GaN-on-SiC technology | ||
| Fr | Kymera to acquire silicon carbide materials firm Fiven | ||
| Fr | Mitsubishi Electric sampling 8W and 14W GaN MMIC power amplifier chips | ||
| Fr | Rocket Lab allocated $23.9m US CHIPS Act funding | ||
| Do | Etching-free pixel definition for InGaN micro-LEDs | ||
| Do | SemiQ launches 1700V SiC Schottky discretes and dual diode modules | ||
| Do | hofer powertrain and ETH Zurich initiate GaN multi-level traction inverter development project | ||
| Do | Element Six and Orbray partner to deliver high-quality wafer-scale single-crystal synthetic diamond | ||
| 12.06. | Crystal IS achieved 99% usable area on 100mm bulk AlN substrate | ||
| 12.06. | Qorvo launches first 4mO SiC JFET in TOLL package | ||
| 12.06. | TI unveils first 650V three-phase GaN intelligent power module for 250W motor drive applications | ||
| 12.06. | Transphorm demos bidirectional SuperGaN power supply with new reference design for e-mobility and energy/industrial markets | ||
| 12.06. | CGD launches P2 series of ICeGaN power ICs | ||
| 11.06. | Nexperia's 650V SiC Schottky diodes now automotive-qualified and available in R2P DPAK packaging | ||
| 11.06. | VisIC presenting new Gen 1+ 650V/6mO and Gen 2 650V/5mO GaN HEMTs at PCIM | ||
| 11.06. | EPC launches 50V, 8.5mO EPC2057 GaN FET |
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